Samsung Demonstrates 3D Stacked FETs with Triple Nanosheet Channels at 42nm

33 pointsposted 4 days ago
by its_ajseven

7 Comments

RicoElectrico

an hour ago

How about heat? Seems these days it's the heat above everything else that's the issue. And more density would only aggravate it.

deepsun

11 minutes ago

If heat is produced by conductors resistance then shorter paths would lead to less heat produced.

juancn

30 minutes ago

That's always an issue, but the industry seems to be moving away from 2D circuits.

Reducing trace length seems to be the way forward for faster/larger circuits. Signal propagation time on-die is becoming an issue.

Things like Huawei's Logic folding, or TSVs, and so on, attack the issue by reducing signal travel time.

This looks like another building block in that direction.

There's also some push at cooling chips from both sides.

arein3

an hour ago

What you loose in heat you gain in speed caused by proximity. Perhaps this will allow for lower voltage and thus less heat.

armitron

an hour ago

This seems like it could accelerate the transition to sub-1nm nodes (previously projected to mid 2030s), maybe by the end of this decade.